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| P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.075 (max) Ultra High-Speed Switching SOP - 8 Package 2 FET Devices Built-in Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems General Description The XP134A1275SR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built-into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. Features Low on-state resistance : Rds (on) = 0.075 ( Vgs = -4.5V ) Rds (on) = 0.115 ( Vgs = -2.5V ) Ultra high-speed switching Operational Voltage : -2.5V High density mounting : SOP - 8 Pin Configuration S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Pin Assignment PIN NUMBER 1 2 3 4 5-6 7-8 PIN NAME S1 G1 S2 G2 D2 D1 FUNCTION Source Gate Source Gate Drain Drain u SOP - 8 Top View Equivalent Circuit Absolute Maximum Ratings Ta=25 OC PARAMETER SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS - 20 + 12 - 4.5 - 18 - 4.5 2 150 - 55 to 150 UNITS V V A A A W O 1 2 8 7 3 4 P - Channel MOS FET ( 2 devices built-in ) 6 5 Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature C C O ( note ) : When implemented on a glass epoxy PCB Electrical Characteristics DC characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds = - 20 , Vgs = 0V Vgs = 12 , Vds = 0V Id = -1mA , Vds = - 10V Id = - 2.5A , Vgs = - 4.5V Id = - 2.5A , Vgs = - 2.5V Id = - 2.5A , Vds = - 10V If = - 4.5A , Vgs = 0V - 0.5 0.062 0.095 7.5 - 0.85 - 1.1 MIN TYP MAX - 10 1 Ta=25 C UNITS O A A V S V - 1.2 0.075 0.115 Dynamic characteristics PARAMETER SYMBOL Ciss Coss Crss Vds = - 10V , Vgs = 0V f = 1 MHz CONDITIONS MIN TYP 770 440 190 MAX Ta=25 C UNITS O u Input Capacitance Output Capacitance Feedback Capacitance pF pF pF Switching characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = - 5V , Id = - 2.5A Vdd = - 10V CONDITIONS MIN TYP 15 20 55 30 MAX Ta=25 C UNITS O ns ns ns ns Thermal characteristics PARAMETER Thermal Resistance ( channel - surroundings ) SYMBOL Rth ( ch - a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 62.5 MAX UNITS O C/W Electrical Characteristics Drain Current Vs. Drain / Source Voltage Drain Current Vs. Gate / Source Voltage Drain / Source On-State Resistance Vs. Gate / Source Voltage Drain / Source On-State Resistance Vs. Drain Current u Drain / Source On-State Resistance Vs. Ambient Temp. Gate / Source Cut Off Voltage Variance Vs. Ambient Temp. Electrical Characteristics Drain / Source Voltage Vs. Capacitance Switching Time Vs. Drain Current Gate / Source Voltage Vs. Gate Charge Reverse Drain Current Vs. Source / Drain Voltage u Standardized Transition Thermal Resistance Vs. Pulse Width |
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